Ion implantation

Manufacturing of a semiconductor component is a very complex process involving many steps under vacuum. Among them, ion implantation process consists of doping the silicon wafer surface with ions, in order to change the electrical characteristics of the material and increase device conductivity. Regardless of implanter technologies (medium current, high current or high energy), implanter tools layout includes three main vacuum areas: Ion source, beamline and end station. We provide high vacuum turbopumps and primary dry pumps solutions for all implant applications and are designed for the lowest cost of ownership and highest process lifetime.

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